SI3585CDV-T1-GE3 - MOSFET N/P-CH 20V 3.9A 6TSOP

Número de Fabricación

SI3585CDV-T1-GE3

Interno Número de peza

ABC-SI3585CDV-T1-GE3

fabricante

Vishay Siliconix

breve descrición

MOSFET N/P-CH 20V 3.9A 6TSOP

estado de RoHS

Chumbo / RoHS compliant

Tempo de entrega

1-2 días

cantidade dispoñible

3022383 Pieces

Prezo de referencia

~~USD 0.1083~~

noso prezo

- (Póñase en contacto connosco por un prezo mellor: [email protected])

ABC Semiconductor ten SI3585CDV-T1-GE3 en stock a venda.

opcións de transporte e tempo de envío:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Opcións de pagamento:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

especificacións para SI3585CDV-T1-GE3

Garantía de calidade : garantía de 365 días

da Resource : Franqueada Distribuidor / fabricante directo

País de orixe : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Número de peza : SI3585CDV-T1-GE3

fabricante : Vishay Siliconix

descrición : MOSFET N/P-CH 20V 3.9A 6TSOP

serie : TrenchFET®

Estado da parte : Active

Tipo FET : N and P-Channel

Función FET : Logic Level Gate

Escorrer a voltaxe de orixe (Vdss) : 20V

Corrente: drenaxe continua (Id) a 25 ° C : 3.9A, 2.1A

Rds On (Max) @ Id, Vgs : 58 mOhm @ 2.5A, 4.5V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Carga de porta (Qg) (máximo) @ Vgs : 4.8nC @ 10V

Capacitancia de entrada (Ciss) (máximo) @ Vds : 150pF @ 10V

Potencia: máx : 1.4W, 1.3W

Temperatura de operación : -55°C ~ 150°C (TJ)

Tipo de montaxe : Surface Mount

Paquete / Estuche : SOT-23-6 Thin, TSOT-23-6

Paquete de dispositivos de provedores : 6-TSOP

peso : -

condición : Novo e orixinal

Ligazóns relacionadas : SI358 , SI3585CD

documentos para SI3585CDV-T1-GE3

follas de datos : SI3585CDV-T1-GE3.pdf

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