SIZ346DT-T1-GE3 - MOSFET 2N-CH 30V 17/30A 8POWER33

Número de Fabricación

SIZ346DT-T1-GE3

Interno Número de peza

ABC-SIZ346DT-T1-GE3

fabricante

Vishay Siliconix

breve descrición

MOSFET 2N-CH 30V 17/30A 8POWER33

estado de RoHS

Chumbo / RoHS compliant

Tempo de entrega

1-2 días

cantidade dispoñible

2218545 Pieces

Prezo de referencia

~~USD 0.14754~~

noso prezo

- (Póñase en contacto connosco por un prezo mellor: [email protected])

ABC Semiconductor ten SIZ346DT-T1-GE3 en stock a venda.

opcións de transporte e tempo de envío:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Opcións de pagamento:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

especificacións para SIZ346DT-T1-GE3

Garantía de calidade : garantía de 365 días

da Resource : Franqueada Distribuidor / fabricante directo

País de orixe : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Número de peza : SIZ346DT-T1-GE3

fabricante : Vishay Siliconix

descrición : MOSFET 2N-CH 30V 17/30A 8POWER33

serie : PowerPAIR®, TrenchFET®

Estado da parte : Active

Tipo FET : 2 N-Channel (Dual)

Función FET : Standard

Escorrer a voltaxe de orixe (Vdss) : 30V

Corrente: drenaxe continua (Id) a 25 ° C : 17A (Tc), 30A (Tc)

Rds On (Max) @ Id, Vgs : 28.5 mOhm @ 10A, 10V, 11.5 mOhm @ 14.4A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 250µA, 2.4V @ 250µA

Carga de porta (Qg) (máximo) @ Vgs : 5nC @ 4.5V, 9nC @ 4.5V

Capacitancia de entrada (Ciss) (máximo) @ Vds : 325pF @ 15V, 650pF @ 15V

Potencia: máx : 16W, 16.7W

Temperatura de operación : -55°C ~ 150°C (TJ)

Tipo de montaxe : Surface Mount

Paquete / Estuche : 8-PowerWDFN

Paquete de dispositivos de provedores : 8-Power33 (3x3)

peso : -

condición : Novo e orixinal

Ligazóns relacionadas : SIZ34 , SIZ346D

documentos para SIZ346DT-T1-GE3

follas de datos : SIZ346DT-T1-GE3.pdf

produtos para SIZ346DT-T1-GE3 Vishay Siliconix

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