SIZ328DT-T1-GE3 - MOSFET DUAL N-CHAN 25V POWERPAIR

Número de Fabricación

SIZ328DT-T1-GE3

Interno Número de peza

ABC-SIZ328DT-T1-GE3

fabricante

Vishay Siliconix

breve descrición

MOSFET DUAL N-CHAN 25V POWERPAIR

estado de RoHS

Chumbo / RoHS compliant

Tempo de entrega

1-2 días

cantidade dispoñible

1609265 Pieces

Prezo de referencia

~~USD 0.2034~~

noso prezo

- (Póñase en contacto connosco por un prezo mellor: [email protected])

ABC Semiconductor ten SIZ328DT-T1-GE3 en stock a venda.

opcións de transporte e tempo de envío:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Opcións de pagamento:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

especificacións para SIZ328DT-T1-GE3

Garantía de calidade : garantía de 365 días

da Resource : Franqueada Distribuidor / fabricante directo

País de orixe : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Número de peza : SIZ328DT-T1-GE3

fabricante : Vishay Siliconix

descrición : MOSFET DUAL N-CHAN 25V POWERPAIR

serie : TrenchFET® Gen IV

Estado da parte : Active

Tipo FET : 2 N-Channel (Dual)

Función FET : Standard

Escorrer a voltaxe de orixe (Vdss) : 25V

Corrente: drenaxe continua (Id) a 25 ° C : 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)

Rds On (Max) @ Id, Vgs : 15 mOhm @ 5A, 10V, 10 mOhm @ 5A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Carga de porta (Qg) (máximo) @ Vgs : 6.9nC @ 10V, 11.3nC @ 10V

Capacitancia de entrada (Ciss) (máximo) @ Vds : 325pF @ 10V, 600pF @ 10V

Potencia: máx : 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)

Temperatura de operación : -55°C ~ 150°C (TJ)

Tipo de montaxe : Surface Mount

Paquete / Estuche : 8-PowerWDFN

Paquete de dispositivos de provedores : 8-Power33 (3x3)

peso : -

condición : Novo e orixinal

Ligazóns relacionadas : SIZ32 , SIZ328D

documentos para SIZ328DT-T1-GE3

follas de datos : SIZ328DT-T1-GE3.pdf

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