SI4214DDY-T1-GE3 - MOSFET 2N-CH 30V 8.5A 8-SOIC

Número de Fabricación

SI4214DDY-T1-GE3

Interno Número de peza

ABC-SI4214DDY-T1-GE3

fabricante

Vishay Siliconix

breve descrición

MOSFET 2N-CH 30V 8.5A 8-SOIC

estado de RoHS

Chumbo / RoHS compliant

Tempo de entrega

1-2 días

cantidade dispoñible

2207023 Pieces

Prezo de referencia

~~USD 0.14831~~

noso prezo

- (Póñase en contacto connosco por un prezo mellor: [email protected])

ABC Semiconductor ten SI4214DDY-T1-GE3 en stock a venda.

opcións de transporte e tempo de envío:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Opcións de pagamento:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

especificacións para SI4214DDY-T1-GE3

Garantía de calidade : garantía de 365 días

da Resource : Franqueada Distribuidor / fabricante directo

País de orixe : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Número de peza : SI4214DDY-T1-GE3

fabricante : Vishay Siliconix

descrición : MOSFET 2N-CH 30V 8.5A 8-SOIC

serie : TrenchFET®

Estado da parte : Active

Tipo FET : 2 N-Channel (Dual)

Función FET : Logic Level Gate

Escorrer a voltaxe de orixe (Vdss) : 30V

Corrente: drenaxe continua (Id) a 25 ° C : 8.5A

Rds On (Max) @ Id, Vgs : 19.5 mOhm @ 8A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Carga de porta (Qg) (máximo) @ Vgs : 22nC @ 10V

Capacitancia de entrada (Ciss) (máximo) @ Vds : 660pF @ 15V

Potencia: máx : 3.1W

Temperatura de operación : -55°C ~ 150°C (TJ)

Tipo de montaxe : Surface Mount

Paquete / Estuche : 8-SOIC (0.154", 3.90mm Width)

Paquete de dispositivos de provedores : 8-SO

peso : -

condición : Novo e orixinal

Ligazóns relacionadas : SI421 , SI4214DD

documentos para SI4214DDY-T1-GE3

follas de datos : SI4214DDY-T1-GE3.pdf

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