NVMFD5C650NLWFT1G - MOSFET 2N-CH 60V 111A S08FL

Número de Fabricación

NVMFD5C650NLWFT1G

Interno Número de peza

ABC-NVMFD5C650NLWFT1G

fabricante

ON Semiconductor

breve descrición

MOSFET 2N-CH 60V 111A S08FL

estado de RoHS

Chumbo / RoHS compliant

Tempo de entrega

1-2 días

cantidade dispoñible

544915 Pieces

Prezo de referencia

~~USD 0.600675~~

noso prezo

- (Póñase en contacto connosco por un prezo mellor: [email protected])

ABC Semiconductor ten NVMFD5C650NLWFT1G en stock a venda.

opcións de transporte e tempo de envío:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Opcións de pagamento:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

especificacións para NVMFD5C650NLWFT1G

Garantía de calidade : garantía de 365 días

da Resource : Franqueada Distribuidor / fabricante directo

País de orixe : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Número de peza : NVMFD5C650NLWFT1G

fabricante : ON Semiconductor

descrición : MOSFET 2N-CH 60V 111A S08FL

serie : Automotive, AEC-Q101

Estado da parte : Active

Tipo FET : 2 N-Channel (Dual)

Función FET : Standard

Escorrer a voltaxe de orixe (Vdss) : 60V

Corrente: drenaxe continua (Id) a 25 ° C : 21A (Ta), 111A (Tc)

Rds On (Max) @ Id, Vgs : 4.2 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 98µA

Carga de porta (Qg) (máximo) @ Vgs : 16nC @ 4.5V

Capacitancia de entrada (Ciss) (máximo) @ Vds : 2546pF @ 25V

Potencia: máx : 3.5W (Ta), 125W (Tc)

Temperatura de operación : -55°C ~ 175°C (TJ)

Tipo de montaxe : Surface Mount

Paquete / Estuche : 8-PowerTDFN

Paquete de dispositivos de provedores : 8-DFN (5x6) Dual Flag (SO8FL-Dual)

peso : -

condición : Novo e orixinal

Ligazóns relacionadas : NVMFD , NVMFD5C6

documentos para NVMFD5C650NLWFT1G

follas de datos : NVMFD5C650NLWFT1G.pdf

produtos para NVMFD5C650NLWFT1G ON Semiconductor

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